器件名称: AP01L60AT
功能描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件大小: 55.11KB 共4页
简 介:AP01L60AT
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Fast Switching Characteristics ▼ Simple Drive Requirement
G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 12Ω 160mA
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is universally used for all commercial-industrial applications.
G D
TO-92 S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 600 ± 30 160 100 300 0.83 -55 to 150 -55 to 150
Units V V mA mA mA W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Max. Value 150 Unit ℃/W
Data & specifications subject to change without notice
200315072-1/4
AP01L60AT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=1mA
Min. 600 2 -
Typ. 0.8 0.8 6.0 1.0 2.5 6.6 5.0 11.7 9.2 170 30.7 5.1
Max. Units 12 4 10 100 ±100 10 270 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qg……
