器件名称: AP02N60P
功能描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
文件大小: 70.98KB 共4页
简 介:AP02N60P
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
G D S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID TO-220
600V 8Ω 2A
Description
The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,DC-AC converters for telecom, industrial and consumer environment.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 ±20 2 1.26 6 39 0.31
2
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
130 2 2 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 62 Units ℃/W ℃/W
200721052-1/4
Data & specifications subject to change without notice
AP02N60P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 600 2 -
Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14
Max. Units 8 4 10 100 ±100 20 240 V V/℃ Ω V S uA uA nA nC nC nC ……
