器件名称: AV1015LT1
功能描述: SOT-23 Plastic-Encapsulate Transistors
文件大小: 247.33KB 共2页
简 介:@vic SOT-23 Plastic-Encapsulate Transistors
AV1015LT1
FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150 SOT— 23
1. BASE 2. EMITTER 3. COLLECTOR
AV1015LT1
TRANSISTOR（ PNP
）
１．０
２．４ １．３
０．９５
２．９
１．９
０．９５
０．４
Unit : mm
ELECTRICAL CHARACTERISTICS（ Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) VCE(sat) VBE(sat)
unless
Test
otherwise
specified）
MIN -50 -50 -5 -0.1 -0.1 -0.1 130 400 -0.3 -1.1 80 V V MHz TYP MAX UNIT V V V
conditions IE=0
Ic= -100μA，
Ic= -0.1mA， IB=0 IE= -10μA， IC=0 VCB=-50 V , IE=0 VCE= -50 V , IB=0 VEB=- 5V , IC=0
μA μA μA
VCE=-6V, IC= -2mA IC=-100 mA, IB= -10m A IC=-100 mA, IB= -10m A VCE=-10V, I C= -1mA
fT
f=30MHz
CLASSIFICATION OF H FE(1) Ｒａｎｋ Ｒａｎｇｅ MARKING
Ｌ １３０－２００ BA
Ｈ ２００－４００
SOT-23 PACKAGE OUTLINE DIMENSIONS
D b
θ
0.2
E1
E
L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 θ 0.300 0° 1.800 0.550REF 0.500 8° 0.012 0° Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8° Max 1.100 0.100 1.000 0.500 0.150 3.000……
