器件名称: MJE15030
功能描述: 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS
文件大小: 217.2KB 共6页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE15028/D
Complementary Silicon Plastic Power Transistors
. . . designed for use as high–frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc Collector–Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc (Min) — MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) — MJE15030, MJE15031 High Current Gain — Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO–220AB Compact Package MAXIMUM RATINGS
MJE15028* MJE15030* PNP MJE15029* MJE15031*
*Motorola Preferred Device
NPN
Rating Symbol VCEO VCB VEB IC IB PD PD MJE15028 MJE15029 120 120 MJE15030 MJE15031 150 150 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 8.0 16 2.0 Collector Current — Continuous — Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 50 0.40 Watts W/_C Watts W/_C 2.0 0.016 TJ, Tstg – 65 to + 150
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120 – 150 VOLTS 50 WATTS
CASE 221A–06 TO–220AB
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RθJC RθJA
Max 2.5
Unit
Thermal Resistance, Junction to Case
_C/W _C/W
Thermal Resistance, Junction to Ambient TA TC
62.5
PD, POWER DISSIPATION (WATTS)
3.0
60
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