器件名称: BC856F_06
功能描述: PNP Silicon Transistor
文件大小: 223.14KB 共4页
简 介:Semiconductor
BC856F
PNP Silicon Transistor
Descriptions
General purpose application Switching application
Features
High voltage : VCEO=-55V Complementary pair with BC846F
Ordering Information
Type NO. BC856F Marking TA : hFE rank Package Code SOT-23F
Outline Dimensions
unit : mm
2.30~2.50 1.50~1.70
1
2.80~3.00 1.90 Typ.
3 2
0.45 Max. 0.80~1.00
0.10 Max.
KST-2092-000
0.20 Max.
PIN Connections 1. Base 2. Emitter 3. Collector
1
BC856F
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-80 -55 -5 -100 200 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure
(Ta=25°C)
Symbol
BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE fT Cob NF
*
Test Condition
IC=-2mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IB=0 VCE=-5V, IE=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200A, f=1KHz,Rg=2K
Min. Typ. Max.
-55 110 -900 150 -700 -650 -15 800 4.5 10
Unit
V mV mV mV nA MHz pF dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-2092-000
2
BC856F
Electrical Characteri……
