器件名称: BC858U
功能描述: PNP Silicon Transistor (General purpose application Switching application)
文件大小: 92.02KB 共3页
简 介:Semiconductor
BC858U
PNP Silicon Transistor
Descriptions
General purpose application Switching application
Features
High voltage : VCEO=-30V Complementary pair with BC848U
Ordering Information
Type NO. BC858U Marking AV : hFE rank Package Code SOT-323
Outline Dimensions
2.1±0.1 1.25±0.05
unit : mm
1
1.30±0.1 2.0±0.2
3
0.30±0.1
2
0.15±0.05
0.90±0.1
0~0.1
0.1 Min.
PIN Connections 1. Base 2. Emitter 3. Collector
KST-3020-001
1
BC858U
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-30 -30 -5 -100 200 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise Figure
(Ta=25°C)
Symbol
BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE* fT Cob NF
Test Condition
IC=-1mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IE= 0 VCE=-5V, IC=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200A, f=1KHz,Rg=2K, f=200Hz
Min. Typ. Max.
-30 110 -900 150 -700 -650 -15 800 4.5 10
Unit
V mV mV mV nA MHz pF dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-3020-001
2
BC858U
Electrical C……
