器件名称: APL602J
功能描述: LINEAR MOSFET 600V 43A 0.125
文件大小: 74.19KB 共4页
简 介:APL602J
600V 43A 0.125
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). Higher FBSOA Popular SOT-227 Package
G
S D
S
S
ISOTOP
OT
22
7
"UL Recognized"
D
Higher Power Dissipation
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
G S
All Ratings: TC = 25°C unless otherwise specified.
APL602J UNIT Volts Amps
600 43 172 ±30 ±40 565 4.52 -55 to 150 300 43 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
600 43 0.125 25
(VDS > I D(ON) x R DS(ON) Max, VGS = 12V)
2
Drain-Source On-State Resistance
(VGS = 12V, 21.5A)
Ohms A
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current ……
