器件名称: APL602L
功能描述: LINEAR MOSFET 600V 49A 0.125
文件大小: 71.24KB 共4页
简 介:600V 49A 0.125
APL602B2 APL602L
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
B2
T-MAX
TO-264
L
Popular T-MAX or TO-264 Package Higher Power Dissipation
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Higher FBSOA
D
G S
All Ratings: TC = 25°C unless otherwise specified.
APL602B2-L UNIT Volts Amps
600 49 196 ±30 ±40 730 5.84 -55 to 150 300 49 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
600 49 0.125 25
(VDS > ID(ON) x R DS(ON) Max, VGS = 12V)
2
Drain-Source On-State Resistance
(VGS = 12V, 24.5A)
Ohms A
Zero Gate Voltage Drain Current (VDS = 600v, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS =……
