器件名称: AS176-59
功能描述: GaAs IC High Isolation Positive Control SPDT Switch DC-3.0 GHz
文件大小: 61.35KB 共2页
简 介:Preliminary
GaAs IC High Isolation Positive Control SPDT Switch DC–3.0 GHz
AS176-59 Features
I Positive Voltage Control (0/+3 to +5 V) I High Isolation (50 dB @ 0.9, 1.9 GHz) I Low DC Power Consumption I Ideal for Cellular, GSM, DCS,PCS, 3G and 2.4 GHz ISM Applications
5
MSOP-8
0.0256 (0.65 mm) TYP. PIN 1 INDICATOR
0.118 (3.00 mm) ± 0.004 (0.1 mm) SQ.
0.193 (4.90 mm) REF.
PIN 1
0.012 (0.30 mm)
+ 0.006 (0.15 mm) - 0.002 (0.05 mm)
Description
The AS176-59 is a GaAs FET IC SPDT switch packaged in a MSOP-8 plastic package for low cost, high isolation commercial applications. Ideal building block for base station dual band applications where synthesizer isolation is critical. Use in conjunction with the AS165-59 SPST switch to meet GSM synthesizer isolation requirements.
7.0 0.038 (0.95 mm) TYP. 0.030 (0.75 mm)
0.017 (0.43 mm)
0.007 (0.18 mm) ± 0.005 (0.12 mm)
8.0 MAX.
0.006 (0.15 mm) 0.002 (0.05 mm)
0.028 (0.70 mm) 0.016 (0.40 mm)
Electrical Specifications at 25°C (0, +3 V), (0, +5 V)
Parameter1 Insertion Loss3 Condition Frequency2 DC–1.0 DC–2.0 DC–2.5 DC–3.0 J1–J2/J1–J3 J1–J2/J1–J3 DC–1.0 DC–2.0 DC–2.5 DC–3.0 DC–1.0 DC–2.0 DC–2.5 DC–3.0 GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz 45/50 41/38 29 22 45/50 47 36 30 Min. Typ. 0.7 0.8 0.8 0.9 50/55 45/42 34 27 50/55 52 40 35 1.3:1 1.5:1 1.5:1 1.8:1 Max. 0.9 1.0 1.1 1.2 Unit dB dB dB dB dB dB dB dB dB dB dB dB
Isolation4
Isolation5
J1–J2/J1–J3
VSWR6
DC–2.0 GHz DC–3.0 GHz
Operating Characteristics at 25°C (0, +……
