器件名称: AS186-302
功能描述: GaAs IC High Isolation Positive Control SPDT Non-Reflective Switch DC-4.0 GHz
文件大小: 122.27KB 共3页
简 介:GaAs IC High Isolation Positive Control SPDT Non-Reflective Switch DC–4.0 GHz
AS186-302 Features
I Positive Voltage Control (0/+3 to 0/+5 V) I High Isolation (55 dB @ 0.9 GHz and 1.9 GHz) I Miniature MSOP-8 Exposed Pad Package I Three Switch Solution for Base Station Synthesizer Switch I Non-Reflective I Operation to 6 GHz
1 PIN 1 INDICATOR
MSOP-8 Exposed Pad
0.122 (3.09 mm) 0.114 (2.89 mm) 8 0.0256 (0.650 mm) TYP. 0.072 (1.83 mm) 0.062 (1.57 mm) 0.073 (1.85 mm) 0.063 (1.60 mm)
0.122 (3.09 mm) 0.114 (2.89 mm) EXPOSED PADDLE
0.200 (5.08 mm) 0.114 (4.67 mm)
0.044 (1.12 mm) MAX.
Description
The AS186-302 is a GaAs FET IC SPDT non-reflective switch packaged in a MSOP-8 exposed pad plastic package for low cost, high isolation commercial applications. Ideal building block for base station applications where synthesizer isolation is critical. Typical applications include GSM, PCS, WCDMA, 2.4 GHz ISM and 3.5 GHz wireless local loop.
0.012 (0.30 mm) 0.008 (0.20 mm)
0.006 (0.15 mm) 0.002 (0.05 mm)
Electrical Specifications (0, +5 V), -40 to +85°C
Parameter1 Insertion Loss Condition Frequency DC–2.0 GHz DC–3.0 GHz DC–4.0 GHz DC–2.0 GHz DC–3.0 GHz DC–4.0 GHz DC–2.0 GHz DC–4.0 GHz 0.5–4.0 GHz Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru 0/+3 V 0/+5 V For Two-tone Input Power +8 dBm 0/+3 V 0/+5 V 0.9–4.0 GHz 0.9–4.0 GHz 0.9–4.0 GHz 0.9–4.0 GHz 17 24 27 42 50 45 35 Min. Typ. 0.8 0.9 1.0 55 50 40 1.3:1 1.3:1 1.35:1 30 50 25 21 27 38 46 1.5:1 1.6:1 1.……
