器件名称: AS192-300
功能描述: PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz
文件大小: 28.84KB 共2页
简 介:PHEMT GaAs IC High Power SP4T Switch 0.1–2.5 GHz
AS192-300 Features
s 4 Symmetric RF Paths s Positive Voltage Control s High IP3 s Excellent Harmonic Performance s Handles GSM Power Levels s Available in MLF-16 (4 x 4 mm) Package
0.067 (1.70 mm) ± 0.006 (0.15 mm) 0.067 (1.70 mm) ± 0.006 (0.15 mm) SEATING PLANE
16 1
MLF-16 (4 x 4 mm)
0.157 (4.00 mm) BSC PIN 1 INDICATOR 0.148 (3.75 mm) BSC
1 2 3
16
0.039 (1.00 mm) MAX. 0.148 (3.75 mm) 0.001 BSC (0.025 mm) ± 0.001 0.157 12 (0.025 mm) (4.00 mm) MAX. BSC
Description
The AS192-300 is a reflective SP4T switch. It is an ideal switch for higher power applications. It can be used for GSM dual band handset applications where both low loss, low current and small size are critical parameters.
2 3
0.078 (1.95 mm) REF.
0.026 (0.65 mm) BSC 0.078 (1.95 mm) REF.
Electrical Specifications at 25°C (0, +4.5 V)
Parameter Insertion Loss Ant-J1, J2, J3, J4 Frequency 0.1–0.5 0.5–1.0 1.0–2.0 2.0–2.5 0.1–0.5 0.5–1.0 1.0–2.0 2.0–2.5 GHz GHz GHz GHz GHz GHz GHz GHz 30 25 19 18 Min. Typ. 0.90 0.95 1.00 1.10 34 29 23 21 1.3:1 1.4:1 Max. 1.1 1.1 1.2 1.3 Unit dB dB dB dB dB dB dB dB
Isolation
Ant-J1, J2, J3, J4
VSWR
0.1–1.0 GHz 1.0–2.5 GHz
Operating Characteristics at 25°C (0, +4.5 V)
Parameter Switching Characteristics Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru 13 dBm/Tone 34 dBm Input 900 MHz VLow = 0 VHigh = +4.5 V @ 200 A Max. for RF power > 30 dBm VHigh = +3.0 V @ 200 A Max. for RF power 20–30 d……
