器件名称: AV103-12
功能描述: GaAs IC 35 dB Voltage Variable Attenuator Single Positive Control 0.5-2.5 GHz
文件大小: 50.29KB 共3页
简 介:Preliminary
GaAs IC 35 dB Voltage Variable Attenuator Single Positive Control 0.5–2.5 GHz
AV103-12 Features
I Single Positive +5 V Control Voltage I 35 dB Attenuation Range @ 0.9 GHz I Less Than ±1 dB Attenuation Change Over Temperature I Excellent Linearity Performance
PIN 1 INDICATOR 0.244 (6.20 mm) 0.228 (5.80 mm)
SOIC-8
PIN 8 0.050 (1.27 mm) BSC
PIN 1 0.068 (1.73 mm) MAX.
0.020 (0.51 mm) MAX. 0.049 (1.24 mm) 0.016 (0.41 mm) 0.016 MAX. (0.41 mm) x 45 CHAMFER
Description
The AV103-12 GaAs IC FET voltage variable attenuator provides 35 dB attenuation range at 900 MHz controlled by a single positive voltage. The VVA has a linear transfer curve of 9 dB/V slope, with input and output VSWR better than 2.1:1 over all states. Its attenuation range at 1900 MHz is 33 dB. It operates with supply voltage of +5 V and control voltage of 0 V to +5 V in a low cost SOIC-8 package. The RF ports require 100 pF DC blocking capacitors.
0.197 (5.00 mm) 0.189 (4.80 mm) 0.010 (0.25 mm) 0.004 (0.10 mm)
0.158 (4.00 mm) 0.150 (3.80 mm) 0.010 (0.25 mm) 0.007 (0.17 mm)
8 MAX.
Electrical Specifications at 25°C (VS = 5 V)
Parameter1 Insertion Loss (VC = 5 V) Frequency 0.5–1.0 GHz 1.0–2.0 GHz 2.0–2.5 GHz 0.5–0.8 0.8–1.0 1.0–1.7 1.7–2.0 2.0–2.5 GHz GHz GHz GHz GHz 28 31 30 29 28 Min. Typ. 2.5 2.8 3.2 32 35 34 33 32 2.1:1 Max. 2.7 3.0 3.4 Unit dB dB dB dB dB dB dB dB
Maximum Attenuation (VC = 0 V)2
VSWR (I/O)3
0.5–2.5 GHz
Operating Characteristics at 25°C (VS = 5 V)
Parameter1 Switching Charac……
