器件名称: BUZ60
功能描述: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
文件大小: 181.36KB 共9页
简 介:BUZ 60
SIPMOS Power Transistor
N channel Enhancement mode Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 60
VDS
400 V
ID
5.5 A
RDS(on)
1
Package TO-220 AB
Ordering Code C67078-S1312-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 5.5 Unit A
ID IDpuls
22
TC = 36 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
5.5 8 mJ
ID = 5.5 A, VDD = 50 V, RGS = 25 L = 18.5 mH, Tj = 25 °C
Gate source voltage Power dissipation 320
VGS Ptot
± 20 75
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 1.67 75 E 55 / 150 / 56
°C K/W
1
07/96
BUZ 60
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
400 3 0.1 10 10 0.65 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
A
VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA 1
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 3.5 A
Semiconductor Group
2
07/96
BUZ 60
Electr……
