器件名称: BUZ60
功能描述: 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
文件大小: 41.23KB 共5页
简 介:BUZ60
Semiconductor
Data Sheet
October 1998
File Number 2260.1
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
Features
5.5A, 400V
[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 1.000 (BUZ60 eld effect transistor designed for applications such as SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Sub Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject Linear Transfer Characteristics (5.5A, This type can be operated directly from integrated circuits. High Input Impedance 400V, Formerly developmental type TA17414. Majority Carrier Device 1.000 Ordering Information Related Literature Ohm, - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND N-ChanComponents to PC Boards” BUZ60 TO-220AB BUZ60 nel Power NOTE: When ordering, use the entire part number. Symbol MOSD FET) /Author G () /KeyS words (Harris Semiconduc- Packaging tor, NJEDEC TO-220AB ChanSOURCE nel DRAIN GATE Power DRAIN (FLANGE) MOSFET, TO220AB) /Creator () /DOCIN FO pdfmark
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright Harris Corporation 1998
BUZ60
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied BUZ60 400 400 5.5 22 ±20 75 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC oC
Drain to Sourc……
