器件名称: KDV214
功能描述: VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
文件大小: 358.41KB 共2页
简 介:SEMICONDUCTOR
TECHNICAL DATA
TV TUNING. FEATURES
°§High Capacitance Ratio : C2V/C25V=6.5(Typ.) °§Low Series Resistance : rS=0.4 (Typ.) °§Excellent C-V Characteristics, and Small Tracking Error. °§Useful for Small Size Tuner.
KDV214
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B 1
G
K
A
H
E
2 D
J C I
MAXIMUM RATING (Ta=25°… )
CHARACTERISTIC Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR VRM Tj Tstg RATING 30 35 (RL=10k ) 125 -55°≠125 UNIT V V °… °…
M M
DIM A B C D E F G H I J K L M
MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + _ 0.05 0.4 + 2 +4/-2 4~6
1. ANODE 2. CATHODE
USC
ELECTRICAL CHARACTERISTICS (Ta=25°… )
CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C2V C25V C2V/C25V rS VR=5V, f=470MHz IR=1A VR=28V VR=2V, f=1MHz VR=25V, f=1MHz TEST CONDITION MIN. 30 14.16 2.11 5.90 TYP. 6.50 0.4 MAX. 10 16.25 2.43 7.15 0.55 UNIT V nA pF pF
Note : Available in matched group for capacitance to 2.5%. C(Max.)-C(Min.) Z0.025 C(Min.) (VR=2~25V)
Marking
Type Name
UO
2002. 6. 14
Revision No : 2
F
L
1/2
KDV214
C V - VR
100 CAPACITANCE CV (pF) 50 30 SERIES RESISTANCE r S ()
f=1MHz Ta=25 C
r s - VR
0.8
f=50MHz Ta=25 C
0.6
10 5 3
0.4
0.2
1
0
4
8
12
16
20
24
28
0
1
3
5
10
30
REVERSE VOLTAGE V R (V)
REVERSE VOLTAGE V R……
