器件名称: KDV214
功能描述: Silicon Epitaxial Planar Diode
文件大小: 34.04KB 共1页
简 介:SMD Type
Silicon Epitaxial Planar Diode KDV214
Diodes
SOD-323
+0.1 1.7-0.1
Unit: mm
+0.05 0.3-0.05
+0.05 0.85-0.05
Features
High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=0.4 (Typ.)
0.475 0.375
+0.1 2.6-0.1
1.0max
Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
A bsolute M axim um R atings T a = 25
P aram eter R everse V oltage P eak R everse V oltage Junction T em perature S torage T em perature R ange S ym bol VR V RM Tj T stg V alue 32 35 (R L = 10K 125 -55 to + 125 ) U nit V V
Electrical Characteristics Ta = 25
Parameter Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance Note : Available in matched group for capacitance to 2.5%. C(Max.)-C(Min.) C(Min.) 0.025 Symbol VR IR C 2V C 25V C 2V/C 25V rs V R = 5V, f = 470 MHz Conditions IR = 1 A Min 30 10 14.16 2.11 5.9 6.5 0.4 16.25 2.43 7.15 0.55 Typ Max Unit V nA pF
V R = 28 V f = 1 MHz;V R = 2 V f = 1 MHz;V R = 25 V
Marking
Marking UO
+0.05 0.1-0.02
+0.1 1.3-0.1
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