器件名称: BUZ100SL
功能描述: SIPMOS Power Transistor (N channel Enhancement mode Logic Level Av
文件大小: 123.26KB 共8页
简 介:BUZ 100 SL
SPP70N05L
SIPMOS Power Transistor
N channel Enhancement mode Logic Level Avalanche-rated dv /dt rated 175°C operating temperature also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 70 A
RDS(on) 0.018
Package
Ordering Code
BUZ 100 SL
TO-220 AB
Q67040-S4000-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C TC = 100 °C
ID
A 70 50
Pulsed drain current
TC = 25 °C
IDpuls
280
E AS
Avalanche energy, single pulse
ID = 70 A, V DD = 25 V, RGS = 25 L = 155 H, Tj = 25 °C
mJ
380
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 70 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 °C
70 17
A mJ kV/s
dv/dt
6
V GS P tot
Gate source voltage Power dissipation
TC = 25 °C
± 14
170
V W
Semiconductor Group
1
30/Jan/1998
BUZ 100 SL
SPP70N05L
Maximum Ratings Parameter Symbol Values Unit
Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 0.88 ≤ 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 130 A
V GS(th)
1.2
IDSS
1.6
2 A
Zero gate voltage drain……
