器件名称: BUZ102S
功能描述: SIPMOS Power Transistor (N channel Enhancement mode Avala
文件大小: 123.09KB 共8页
简 介:BUZ 102 S
SPP52N05
SIPMOS Power Transistor
N channel Enhancement mode Avalanche-rated dv /dt rated 175°C operating temperature also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 52 A
RDS(on) 0.023
Package
Ordering Code
BUZ 102 S
TO-220 AB
Q67040-S4011-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C TC = 100 °C
ID
A 52 37
Pulsed drain current
TC = 25 °C
IDpuls
208
E AS
Avalanche energy, single pulse
ID = 52 A, V DD = 25 V, RGS = 25 L = 181 H, Tj = 25 °C
mJ
245
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 52 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 °C
52 12
A mJ kV/s
dv/dt
6
V GS P tot
Gate source voltage Power dissipation
TC = 25 °C
± 20
120
V W
Semiconductor Group
1
30/Jan/1998
BUZ 102 S
SPP52N05
Maximum Ratings Parameter Symbol Values Unit
Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 1.25 ≤ 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 90 A
V GS(th)
2.1
IDSS
3
4 A
Zero gate voltage drain current
V DS = 50 V,……
