器件名称: MJE13005
功能描述: NPN SILICON POWER TRANSISTOR
文件大小: 311.56KB 共8页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE13005/D
MJE13005*
Designer's
SWITCHMODE Series NPN Silicon Power Transistors
These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: VCEO(sus) 400 V Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C . . . tc @ 3A, 100_C is 180 ns (Typ) 700 V Blocking Capability SOA and Switching Applications Information.
Data Sheet
*Motorola Preferred Device
4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS
v
CASE 221A–06 TO–220AB
MAXIMUM RATINGS
Rating
Symbol
Value 400 700 9 4 8 2 4
Unit Vdc Vdc Vdc Adc Adc Adc
Collector–Emitter Voltage Collector–Emitter Voltage Emitter Base Voltage
VCEO(sus) VCEV
VEBO IC ICM IB IBM IE IEM PD PD
Collector Current — Continuous — Peak (1) Base Current — Continuous — Peak (1)
Emitter Current — Continuous — Peak (1)
6 12 2 16
Total Power Dissipation @ TA = 25_C Derate above 25_C
Watts mW/_C Watts mW/_C
Total Power Dissipation @ TC = 25_C Derate above 25_C
75 600
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTER……
