器件名称: STD19NE06
功能描述: N-CHANNEL 60V - 0.042 W - 19A IPAK/DPAK STripFET POWER MOSFET
文件大小: 306.4KB 共9页
简 介:N-CHANNEL 60V - 0.042 - 19A IPAK/DPAK STripFET POWER MOSFET
TYPE STD19NE06
s s s s s
STD19NE06
VDSS 60 V
RDS(on) <0.050
ID 19 A
s
TYPICAL RDS(on) = 0.042 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175 oC OPERATING TEMPERATURE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")
3 2 1
IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”)
3 1
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 19 13.5 76 70 0.46 1.45 -55 to 175
(1) Starting T j = 25 oC, ID = 30A, VDD = 30 V
Unit V V V A A A W W/°C mJ °C
() Pulse width limited by safe operating area March 2002
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