器件名称: 2N2060
功能描述: UNITIZED DUAL NPN SILICON TRANSISTOR
文件大小: 53.14KB 共2页
简 介:TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270 Devices 2N2060 2N2060L Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Symbol
VCEO VCBO VEBO IC
2N2060
60 100 7.0 500
Unit
Vdc Vdc Vdc mAdc
One Both Section Sections Total Power Dissipation @ TA = +250C (1) 540 600 PT @ TC = +250C (2) 1.5 2.12 Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg 1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections 2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections
mW W 0 C
TO-78*
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics Symbol V(BR)CER V(BR)CEO ICBO Min. 80 60 10 2.0 10 2.0 Max. Unit Vdc Vdc Adc ηAdc Adc ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(3) RBE ≤ 10 , IC = 10 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VEB = 5.0 Vdc
IEBO
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2N2060, 2N2060L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio IC = 10 Adc, VCE = 5.0 Vdc IC = 100 Adc, VCE = 5.0 Vdc IC = 1.0 mAdc, VCE = 5.0……
