器件名称: MJE12007
功能描述: Silicon NPN Power Transistors
文件大小: 89.7KB 共3页
简 介:SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-220 package High voltage Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as: Fluorescent lamp ballasts Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING
PIN 1 2 3 Base Collector Emitter DESCRIPTION
MJE12007
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 750 9 2.5 5 80 150 -65~150 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA; IB=0 IC=1A ;IB=0.5A IC=2A ;IB=1A IC=1A ;IB=0.5A IC=2A ;IB=1A VCEV=RatedValue; VBE(off)=-1.5V TC=100 VEB=9V; IC=0 IC=1A ; VCE=5V IC=2A ; VCE=5V 3 2.5 MIN 750
MJE12007
SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 I……
