器件名称: MJE12007
功能描述: Silicon NPN Power Transistors
文件大小: 123.56KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220 package ·High voltage ·Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as: ·Fluorescent lamp ballasts ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits
PINNING PIN 1 2 3 Base Collector DESCRIPTION
MJE12007
·
Absolute maximum ratings(Tc=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg
固电
Emitter
体 导 半
PARAMETER
A H C IN
Collector-base voltage
EM S E NG
Open emitter Open base
D N O IC
R O T UC
VALUE 1500 750 9 2.5 5 UNIT V V V A A W ℃ ℃
CONDITIONS
Collector-emitter voltage
Emitter-base voltage Collector current (DC) Collector current-Peak Total power dissipation Junction temperature Storage temperature
Open collector
TC=25℃
80 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEV IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA; IB=0 IC=1A ;IB=0.5A IC=2A ;IB=1A IC=1A ;IB=0.5A IC=2A ;IB=1A VCEV=RatedValue; VBE(off)=-1.5V TC……
