器件名称: MJE13003
功能描述: NPN EPITAXIAL SILICON POWER TRANSISTORS
文件大小: 153.22KB 共4页
简 介:Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTORS
MJE13002 MJE13003 TO-126 Plastic Package
Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25C Derate Above 25C Total Power Dissipation @ TC=25C Derate Above 25C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 3.12 89 275 C/W C/W C Rth (j-a) Junction to Ambient in free air Maximum Load Temperature for TL Soldering Purposes 1/8" from Case for 5 Seconds *Pulse Test: Pulse Width=5ms, Duty Cycle<10% ELECTRICAL CHARACTERISTICS (Tc=25C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage **VCEO(sus) IC=10mA, IB=0 MJE13002 MJE13003 VCEV=Rated Value, VBE(off)=1.5V VCEV=Rated Value, VBE(off)=1.5V,Tc=100C VEB=9V, IC=0 SYMBOL VCEO(sus) VCEV VEBO IC *ICM IB *IBM IE *IEM PD PD Tj, Tstg MJE13002 300 600 9.0 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11.2 40 320 - 65 to 150 MJE13003 400 700 UNIT V V V A A A A A A W mW/ C W mW/ C C
MIN 300 400
TYP
MAX
UNIT V V
Collector Cuttoff Current
ICEV
1.0 5.0 1.0
mA mA mA
Emitter Cuttoff Current
IEBO
Continental Device India Limited
Data Sheet
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