器件名称: MJE15029
功能描述: Silicon PNP Power Transistors
文件大小: 118.91KB 共4页
简 介:SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-220C package Complement to type MJE15028 High transition frequency DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS Designed for use as high–frequency drivers in audio amplifiers.
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
MJE15029
Absolute maximum ratings (Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 -16 -2 2 50 150 -65~150 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance ; junction to case Thermal resistance , junction to ambient MAX 2.5 62.5 UNIT /W /W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-1A ;IB=-0.1A IC=-1A ; VCE=-2V VCB=-120V; IE=0 VCE=-120V; IB=0 VEB=-5V;……
