器件名称: MJE15029
功能描述: 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS
文件大小: 79.97KB 共6页
简 介:MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)
Preferred Device
Complementary Silicon Plastic Power Transistors
These devices are designed for use as highfrequency drivers in audio amplifiers.
Features http://onsemi.com
DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage VCEO(sus) = 120 Vdc (Min); MJE15028, MJE15029 = 150 Vdc (Min); MJE15030, MJE15031 High Current Gain Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO220AB Compact Package PbFree Packages are Available*
8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120150 VOLTS, 50 WATTS
MAXIMUM RATINGS
Rating CollectorEmitter Voltage MJE15028, MJE15029 MJE15030, MJE15031 CollectorBase Voltage MJE15028, MJE15029 MJE15030, MJE15031 EmitterBase Voltage Collector Current Base Current Total Device Dissipation @ TC = 25_C Derate above 25°C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range Continuous Peak Symbol VCEO 120 150 VCB 120 150 VEB IC ICM IB PD PD TJ, Tstg 5.0 8.0 16 2.0 50 0.40 2.0 0.016 65 to +150 Vdc Adc Adc W W/_C W W/_C _C MJE150xxG AY WW Vdc Value Unit Vdc 1 2 3 TO220AB CASE 221A09 STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, JunctiontoCase Thermal Resistance, JunctiontoAmbient Symbol RqJC RqJA Max 2.5 62.5 Unit _C/W _C/W MJE150xx = Device Code x = 28, 29, 30, or 31 G = PbFree Package A = Assembly Location Y = Year WW = W……
