器件名称: 2SK1162
功能描述: Silicon N-Channel MOS FET
文件大小: 34.56KB 共6页
简 介:2SK1161, 2SK1162
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1161, 2SK1162
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1161 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 10 30 10 100 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1161, 2SK1162
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1161 V(BR)DSS 2SK1162 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V A A I G = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 — — — — — — — — — — 0.6 0.7 7.0 1050 280 40 15 60 90 45 1.0 350 3.0 0.8 0.9 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0, diF/dt = 100 A/s I D = 5 A, VGS = 10 V, RL = 6 I D = 5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 5 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0
Gate to source breakdown volt……
