器件名称: MJE171
功能描述: 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
文件大小: 172.52KB 共4页
简 介:MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE171/D
Complementary Plastic Silicon Power Transistors
. . . designed for low power audio amplifier and low current, high speed switching applications. Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182 DC Current Gain — hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc Current–Gain — Bandwidth Product — fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages — ICBO = 100 nA (Max) @ Rated VCB MAXIMUM RATINGS
MJE171 MJE181 80 60 MJE172 MJE182 100 80
MJE171* MJE172* NPN MJE181* MJE182*
*Motorola Preferred Device
PNP
Rating Symbol VCB VCEO VEB IC IB PD PD Unit Vdc Vdc Vdc Adc Adc Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage 7.0 3.0 6.0 1.0 Collector Current — Continuous Peak Base Current Total Power Dissipation @ TA = 25_C Derate above 25_C 1.5 0.012 12.5 0.1 Watts W/_C Watts W/_C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 – 80 VOLTS 12.5 WATTS
CASE 77–08 TO–225AA
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol θJC θJA
Max 10
Unit
Thermal Resistance, Junction to Case
_C/W _C/W
Thermal Resistance, Junction to Ambient TA TC 2.8 14 2.4 2.0 12 10
83.4
PD, POWER DISSIPATI……
