器件名称: 28F256
功能描述: 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
文件大小: 456.67KB 共35页
简 介:FINAL
Am28F256A
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 A maximum standby current — No data retention power consumption s Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts — 32-pin PDIP — 32-pin PLCC — 32-pin TSOP s 100,000 write/erase cycles minimum s Write and erase voltage 12.0 V ±5% s Latch-up protected to 100 mA from –1 V to VCC +1 V s Embedded Erase Electrical Bulk Chip-Erase — 1.5 seconds typical chip-erase including pre-programming s Embedded Program — 14 s typical byte-program including time-out — 0.5 second typical chip program s Command register architecture for microprocessor/microcontroller compatible write interface s On-chip address and data latches s Advanced CMOS flash memory technology — Low cost single transistor memory cell s Embedded algorithms for completely self-timed write/erase operations
GENERAL DESCRIPTION
The Am28F256A is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F256A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F256A is erased when shipped from the factory. The standard Am28F256A offers access times as……
