器件名称: AO4404
功能描述: N-Channel Enhancement Mode Field Effect Transistor
文件大小: 587.35KB 共6页
简 介:July 2001
AO4404 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
VDS (V) = 30V ID = 8.5A RDS(ON) < 24m (VGS = 10V) RDS(ON) < 30m (VGS = 4.5V) RDS(ON) < 48m (VGS = 2.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±12 Gate-Source Voltage Continuous Drain TA=25°C 8.5 Current A 7.1 TA=70°C ID Pulsed Drain Current
B
Units V V A
IDM PD TJ, TSTG
TA=25°C TA=70°C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C
60 3 2.1 -55 to 150
W °C
Symbol
A A
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO4404
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistanc……
