器件名称: 2SA1979
功能描述: PNP Silicon Transistor (Medium power amplifier)
文件大小: 239.94KB 共4页
简 介:Semiconductor
2SA1979
PNP Silicon Transistor
Description
Medium power amplifier
Features
Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with 2SC5342
Ordering Information
Type NO. 2SA1979 Marking A1979 Package Code TO-92
Outline Dimensions
3.35~3.55 4.4~4.6 2.15~2.35
unit : mm
4.4~4.6
0.38~0.42
1.96~2.16
14.0±0.40
1.27 Typ. 2.54 Typ.
1
2 3
PIN Connections 1. Emitter 2. Collector 3. Base
1.1~1.3
0.38
KST-9001-002
1
2SA1979
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-40 -32 -5 -500 625 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob
Test Condition
IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz
Min. Typ. Max.
-40 -32 -5 70 200 7.5 -0.1 -0.1 240 -0.25 -
Unit
V V V A A V MHz pF
*
: hFE rank / O : 70~140, Y : 120~240
KST-9……