器件名称: MMBTH10
功能描述: RF TRANSISTOR
文件大小: 196.21KB 共5页
简 介:UNISONIC TECHNOLOGIES CO., LTD MMBTH10
RF TRANSISTOR
DESCRIPTION
NPN SILICON TRANSISTOR
The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver.
*Pb-free plating product number: MMBTH10L
ORDERING INFORMATION
Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel
Order Number Normal Lead Free Plating MMBTH10-x-AE3-C-R MMBTH10L-x-AE3-C-R
MARKING
3E
www.unisonic.com.tw Copyright 2005 Unisonic Technologies Co., Ltd
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QW-R206-003,E
MMBTH10
ABSOLUTE MAXIMUM RATING (Ta=25℃)
SYMBOL VCBO VCEO VEBO PC IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation Collector current
NPN SILICON TRANSISTOR
RATINGS 30 25 3 225 50
UNIT V V V mW mA
Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
MIN 30 25 3 TYP MAX UNIT V V V mV mV nA nA pF MHz
PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100μA Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Base Breakdown Voltage BVEBO IE=10μA Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400μA Base-Emitter on Voltage VBE(ON) VCE=10V, IC=4mA Collector Cut-off Current ICBO VCB=25V Emitter Cut-off Current ……
